Advanced Program
Day 1 (24th March 2025)| Opening Remarks | 9:50 | Yukiharu Uraoka , General Chair, ITC 2025 |
| Keynote Addresses I | 10:00-10:30 | Toshio Kamiya , Science Tokyo, Japan Keynote “Computational science in semiconductor research” |
| 10:30-11:00 | Jin Jang , Kyung Hee Univ., Korea Keynote “Poly-Oxide TFT for Display Application” |
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| 11:00-11:30 | Break | |
| Session 1 | 11:30-11:55 | Hyun Jae Kim , Yonsei Univ., Korea Invited “How Much Oxide Can Replace Silicon? No More LTPS in the Future?” |
| 11:55-12:20 | Tatsuya Okada , Ryukyu Univ., Japan Invited “Metal Source/Drain Structure TFTs using poly-Si Crystallized by Blue Laser Diode Annealing” |
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| 12:20-13:30 | Lunch | |
| Session 2 | 13:30-13:55 | Tatsuya Onuki , Semiconductor Energy Lab., Japan Invited “High-performance single-crystalline In2O3 FET toward 3D VLSI circuits” |
| 13:55-14:20 | Hajime Wakatabe , Japan Display Inc., Japan Invited “Enhancement of field effect mobility in poly-crystalline oxide TFT” |
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| 14:20-14:45 | Norbert Fruehauf , University of Stuttgart, Germany Invited “Processes for Active Matrix Sensor and Actuator Arrays” |
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| 14:45-15:15 | Break | |
| Session 3 | 15:15-15:40 | Sang-Hee Ko Park , KAIST, Korea Invited “Oxide TFT for Sensor Application” |
| 15:40-16:05 | Kenji Nomura , Univ. of California San Diego, USA Invited “Ultrathin oxide channel TFT for circuit applications” |
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| 16:05-16:30 | Chuan Liu , Sun Yat-sen Univ., China Invited “Integration of TFTs beyond display applications” |
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| 16:30-17:30 | Poster session I | |
| 17:30-18:30 | Opening Party |
Day 2 (25th March 2025)
| Session 4 | 9:30-9:55 | Shengdong Zhang , Peking Univ., China Invited “Scaling-down Oxide TFTs into the Nanoscale Region for Three-Dimensional Integrated Circuits” |
| 9:55-10:20 | Di Geng , Chinese Academy of Science, China Invited “Nano-scale IGZO FET” |
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| 10:20-10:45 | Jin-Seong Park , Hanyang Univ., Korea Invited “Recent Progress on Spatial Atomic Layer Deposited Oxide Semiconductor Thin Film Transistor beyond Throughput and Performance issues” |
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| 10:45-11:45 | Break | |
| Keynote Addresses II | 11:15-11:25 | Introduction of ASPIRE |
| 11:25-11:55 | Satoshi Hamaguchi , Osaka Univ. Japan Keynote “Atomic layer processes toward Angstrom-node semiconductor devices” |
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| 11:55-13:15 | Lunch | |
| Session 5 (ASPIRE) | 13:15-13:40 | Masaharu Kobayashi , University of Tokyo, Japan Invited “Nanosheet oxide semiconductor FETs by Atomic Layer Deposition for 3D LSI application” |
| 13:40-14:05 | Chikyo Toyohiro , NIMS, Japan Invited “Data Driven materials science for future nano electronics” |
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| 14:05-14:30 | Yasuyuki Okura , Advance Soft, Japan Invited “Technology CAD and its role to understand thin film transistor” |
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| 14:30-14:50 | Break | |
| Session 6 (ASPIRE) | 14:50-15:15 | Kazuyuki Nakamura , Kyushu Institute of Technology, Japan Invited “Self-sustainable operation of the Semiconductor Open Facility Center for industryacademia collaboration and recurrent education” |
| 15:15-15:40 | Masaharu Shiratani , Kyusyu University, Japan Invited “Revolutionizing Plasma CVD Film Properties: Unlocking New Potential with Unique Techniques” |
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| 15:40-16:05 | Kenji Ishikawa , Nagoya Univ., Japan Invited “Energy-efficient, environmental, evolutional, and educational E4 assurance for new advanced semiconductor etching technologies based on low-temperature plasma science” |
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| 16:05-16:30 | Hiori Kino , NIMS, Japan Invited “Integrated approach to ontology-based knowledge graphs and provenance graphs” |
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| 16:30-17:30 | Poster session II | |
| 18:00-20:00 | Banquet (KOTOWA Narakouen Premium View) |
Day 3 (26th March 2025)
| Session 7 | 9:20-9:45 | Yvan Bonnassieux , Ecole Polytechnique, France Invited “OTFT and OECT IA modelling” |
| 9:45-10:10 | Matteo Rapisarda , IMM-CNR, Italy Invited “Flexible Organic Photo-Transistors As Key Elements Of Detectors for Medical Proton Therapy: Recent developments” |
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| 10:10-10:35 | Jiang Chen , Tsing Hwa Univ., China Invited “Organic Thin-Film Transistors and Circuits for Bioelectronics” |
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| 10:35-10:50 | Eva Bestelink , University of Surrey, UK “Cu-contact solution processed polymer source-gated phototransistors |
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| 10:50-11:10 | Break | |
| Session 8 | 11:10-11:35 | Eisuke Tokumitsu , JAIST, Japan Invited “Ferroelectric gate thin film transistors with conductive oxide channel” |
| 11:35-12:00 | Byung Seong Bae , Hoseo Univ., Korea Invited “Vertical Structure a-IGZO TFT Using Interfacial Oxidation” |
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| 12:00-12:15 | Huan Hsu , National Sun Yat-sen Univ. , Taiwan “Impacts of Auxiliary Gate Structure on Ferroelectric Thin-Film Transistors” |
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| 12:15-12:30 | Christophe Avis , Kyung Hee University, Korea “Making and analyzing amorphous tin oxide TFTs” |
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| 12:30-13:45 | Lunch | |
| Session 9 | 13:45-14:10 | Radu Sporea , University of Surrey, UK Invited “Multimodal transistors and their applications to analog circuits” |
| 14:10-14:35 | Hyeon-Jun Lee , Daegu Gyeonbuk Institute of Sci. & Tech., Korea Invited “Oxide Semiconductors as Artificial Intelligence Operators and Their Future” |
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| 14:35-14:50 | Mattia Scagliotti , CNR-IMM, Italy “Next-Gen Neuromorphic Circuits: Fabrication of Flexible Full Organic Systems with CMOS Technology” |
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| 14:50-15:05 | Han-Yin Liu , National Sun Yat-Sen University, Taiwan “Mist-CVD Process for Sn-Al-Zn-O Thin-Film Transistors: Amorphous and Polycrystalline Comparisons” |
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| 15:05-15:25 | Break | |
| Session 10 (Students presentations) |
15:25-15:40 | Ji-Won Kang , Kyung Hee University, Korea “Process-Tolerant Vertical Stack Configuration of Planar- and Vertical-Channel InGaZnO TFTs Using a Single Active Layer” |
| 15:40-15:55 | Chuanjun Wu , NAIST, Japan “Crystal Orientation Control and Optimization of Co-Sputtered Mg:ZnO Thin Films for Ferroelectric FETs” |
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| 15:55-16:10 | Mir Muttakabir Alom , Kochi University of Technology, Japan “Control of channel shortening in top-gate poly-InOx TFT with boron implanted source and drain regions” |
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| 16:10-16:25 | Kazuki Nakagawa , Osaka Metropolitan University, Japan ”Tuning of synaptic characteristics in organic floating-gate memory by adding soluble fullerene to the charge storage layer” |
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| 16:25-16:40 | Sarah Alamri , Osaka Univ., Japan “Effects of Chamber Geometry on RF-driven Capacitively Coupled Argon Plasmas: Comparison between Numerical Simulation and Experiments” |
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| 16:40-16:55 | Atsushi Shimizu , Science Tokyo, Japan “Temperature-dependent defect distributions of amorphous In-Ga-Zn-O thin film transistor for gas sensor applications” |
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| 16:55-17:10 | Closing Remarks |
Poster Presenter
| P-1 | Simon Chouteau | Osaka Univ. | Low-pressure aerosol-assisted plasma processes for the growth of nanocomposite thin films |
| P-2 | Hou-Yen Tsaob | National Taiwan University of Science and Technology | Pentacene-based Photo OTFT with High Responsivity in Near Infrared Light by Using ClAlPc/C70 Light-Absorbing Layer |
| P-3 | Xiaoci Liang | Sun Yat-Sen Univ. | Multimode transistors based on ion-dynamic capacitance |
| P-4 | Kazuki Nagamine | KyushuUniv. | Impact of Neon Gas Addition on Fabrication of a-C:H Films via C2H2/Ar/Ne Plasma-Enhanced Chemical Vapor Deposition |
| P-5 | Haripriya Gopalakrishnan Nair Ramani | DGIST | Investigations on the role of active layer oxygen partial pressure on the resistive switching and DC relaxation characteristics of an a-IGZO based memory device |
| P-6 | Chae-Eun Oh | Kyung Hee Univ. | Enhancement of Operational Reliability for In2O3 Vertical Channel Transistors by Improving the Back-Channel Interface |
| P-7 | Chun-Yuan Chen | National Taiwan University of Scienceand Technology | An 8T0.5C Compensating Pixel Circuit with Low-Temperature Poly-Si Oxide TFTs for Micro-LED Displays |
| P-8 | Songjia Han | South China Agricultural Univ. | Solution-Deposited and Patternable Hydrogel Electrolyte for Organic Electrochemical Transistor |
| P-9 | Mark D. Ilasin | NAIST | Impact of Argon Plasma in Rare-metal-free Amorphous Oxide Source-Gated Transistors |
| P-10 | Lucas F. Spiske | Osaka Univ. | Surface reaction analysis of thermal ALE of transition metal oxides with acetylacetonate ligands |
| P-11 | QI CHEN | UCLouvain | Measurement and modelling of low-frequency noise in polysilicon thin-film source-gated transistors |
| P-12 | Krittin Auewattanapun | NAIST | Work Function Tuning of Pt-Al Alloy Co-Sputtered Electrodes for Enhanced Interface Performance with IGZO Channel |
| P-13 | Dian Budiarti Kastian | NAIST | Utilization of Solution Combustion Synthesis High-k Al2O3 Gate Insulator for Low Voltage Solution-Processed a-Ga2Ox Thin-Film Transistor |
| P-14 | Dae Woong Kim | Univ. of Sungkyunkwan | Analysis of bias stress instability in double-gate oxide thin-film transistors |
| P-15 | Hikaru Hoshikawa | NAIST | Crystallization behavior and transistor application of In-Ga-O thin films grown by atomic layer deposition |
| P-16 | HeeYeon Noh | DGIST | Investigating Hydrogen Ion Migration as a Novel approach for Improved Resistive Switching in ReRAM |
| P-17 | Yuto Kawato | NAIST | Effect of oxidation time of plasma-enhanced atomic layer deposition on indium oxide-based field effect transistors |
| P-18 | Spencer Alexander Skinner | Univ. of Surrey | Top-Contact Organic Thin-Film Transistor Fabrication Optimization Using Ultra-Precise Dispensing |
| P-19 | Kazuho Ishi | Kogakuin Univ. | Investigation of Annealing treatment for Improving Subthreshold in Amorphous p-type TeOx-based TFT |
| P-20 | Shinjiro Ono | Kyushu Univ. | Damageless Si Etching by Cl Neutral Beam process |
| P-21 | Francesca Pescosolido | CNR-Institute for Microelectronics and Microsystems | Biopolymers substrates for new flexible and sustainable electronic systems |
| P-22 | Jomar U. Tercero | Osaka Univ. | Molecular dynamics simulations of transport mechanisms in silicon nitride PE-ALD on a closing narrow-gap trench |
| P-23 | Fei Liu | VTT Technical Research Centre of Finland Ltd. | Solution-processed metal oxide TFTs with different metal contact electrodes patterned by high-resolution reverse-offset printing |
| P-24 | K.M.Niang | Univ. of Cambridge | Amorphous P-type SnO Thin Film Transistors for CMOS |
| P-25 | Sang Han Ko | Kyung Hee Univ. | Improvement in Memory Operations in 2T0C DRAM Cell Using Double-Layer IGZO Channels for Low-Contact Resistance |
| P-26 | Haobin Zhou | Tsinghua Univ. | TFT Neurostimulator with Electro-Biological Interface for Cultured DRG Neurons |
| P-27 | Nu Myat Thazin | NAIST | A Study on the Combustion Synthesis of Tellurium Oxide Thin Films for p-Type Oxide Thin-Film Transistor Applications |
| P-28 | Candell Grace Paredes Quino | NAIST | Formulation, Deposition and Annealing Conditions Role on Combustion-assisted Al2O3 and Applications to SixSnyO TFTs |
| P-29 | Horituchi Atsushi | Ryukoku Univ. | Study of a Composite Model in Three-Layer GTO Memristor |
| P-30 | Nasrud Din | Southeast Univ. | Study of a Composite Model in Three-Layer GTO Memristor |
| P-31 | Takashi Nagase | Osaka Metropolitan Univ. | Synthesis of Highly Stable Near-Infrared FAPbI3 Perovskite doped with TEOS and its Applications in NIR Light-Emitting Diodes for Bioimaging |
| P-32 | William Cheng-Yu Ma | National Sun Yat-sen Univ. | Impact of Pulse Width on Ferroelectric Thin-Film Transistors |
| P-33 | Yuki Kawasaki | Ryukoku Univ. | Frequency dependence of dielectric constant of (Bi,La)4Ti3O12 |